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Model NTB25P06G
Description -60V,-27.5APower MOSFET
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Brand: ON Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5446) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/rated current: 27.5 A

Technical parameters/drain source resistance: 65.0 mΩ

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 120 W

Technical parameters/input capacitance: 1.68 nF

Technical parameters/gate charge: 50.0 nC

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/breakdown voltage of gate source: ±15.0 V

Technical parameters/Continuous drain current (Ids): 27.5 A

Technical parameters/rise time: 72 ns

Technical parameters/Input capacitance (Ciss): 1680pF @25V(Vds)

Technical parameters/rated power (Max): 120 W

Technical parameters/descent time: 190 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 120 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTB18N06LT4G NTB18N06LT4G ON Semiconductor 类似代替 TO-263-3
15A,60V功率MOSFET
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