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Model NTB18N06LT4G

Description 15A,60VPower MOSFET

Brand: ON Semiconductor

Packaging TO-263-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	60.0 V
Technical parameters/rated current:	15.0 A
Technical parameters/drain source resistance:	100 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	48.4 W
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Leakage source breakdown voltage:	60.0 V
Technical parameters/breakdown voltage of gate source:	±10.0 V
Technical parameters/Continuous drain current (Ids):	15.0 A
Technical parameters/rise time:	121 ns
Technical parameters/Input capacitance (Ciss):	440pF @25V(Vds)
Technical parameters/rated power (Max):	48.4 W
Technical parameters/descent time:	42 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	48.4W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-263-3
Dimensions/Packaging:	TO-263-3
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99