Technical parameters/rated voltage (DC): | 20.0 V |
|
Technical parameters/rated current: | 4.50 A |
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Technical parameters/capacitance: | 25.0 pF |
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Technical parameters/output current: | ≤6.00 A |
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Technical parameters/drain source resistance: | 60.0 mΩ |
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Technical parameters/polarity: | Standard |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | 20.0 V |
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Technical parameters/breakdown voltage of gate source: | ±8.00 V |
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Technical parameters/Continuous drain current (Ids): | 4.50 A |
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Technical parameters/rated power (Max): | 900 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 4.9 mm |
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Dimensions/Width: | 3.9 mm |
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Dimensions/Height: | 1.75 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 类似代替 | SOIC-8 |
双N沟道增强型场效应晶体管 Dual N-Channel Enhancement Mode Field Effect Transistor
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||
IRF7301PBF
|
Infineon | 功能相似 | SOIC-8 |
N 沟道 20 V 2 W 20 nC 功率 Mosfet 表面贴装 - SOIC-8
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||
IRF7301PBF
|
International Rectifier | 功能相似 | SOIC-8 |
N 沟道 20 V 2 W 20 nC 功率 Mosfet 表面贴装 - SOIC-8
|
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