Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 5.20 A
Technical parameters/number of channels: 2
Technical parameters/drain source resistance: 0.07 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/product series: IRF7301
Technical parameters/input capacitance: 660pF @15V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20 V
Technical parameters/Continuous drain current (Ids): 5.20 A
Technical parameters/rise time: 42.0 ns
Technical parameters/thermal resistance: 62.5℃/W (RθJA)
Technical parameters/Input capacitance (Ciss): 660pF @15V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7311PBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7311PBF 双路场效应管, MOSFET, 双N沟道, 6.6 A, 20 V, 29 mohm, 4.5 V, 700 mV
|
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