Technical parameters/rated power: 2 W
Technical parameters/drain source resistance: 0.05 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 700 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 5.2A
Technical parameters/rise time: 42 ns
Technical parameters/Input capacitance (Ciss): 660pF @15V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/descent time: 51 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7311PBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7311PBF 双路场效应管, MOSFET, 双N沟道, 6.6 A, 20 V, 29 mohm, 4.5 V, 700 mV
|
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