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Model MRF166W
Description TMOSBroadband RF Power Field Effect Transistor TMOS BROADBAND RF POWER FET
Product QR code
Brand: M/A-Com
Packaging 412-01
Delivery time
Packaging method Tray
Standard packaging quantity 1
874.21  yuan 874.21yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6087) Minimum order quantity(1)
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Technical parameters/frequency:

30MHz ~ 500MHz

 

Technical parameters/rated current:

8 A

 

Technical parameters/Leakage source breakdown voltage:

65.0V (min)

 

Technical parameters/output power:

40 W

 

Technical parameters/gain:

16 dB

 

Technical parameters/test current:

100 mA

 

Technical parameters/Input capacitance (Ciss):

28pF @28V(Vds)

 

Technical parameters/dissipated power (Max):

175000 mW

 

Technical parameters/rated voltage:

65 V

 

Encapsulation parameters/installation method:

Flange

 

Package parameters/number of pins:

5

 

Encapsulation parameters/Encapsulation:

412-01

 

Dimensions/Packaging:

412-01

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tray

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

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MOSFET宽带射频功率FET MOSFET BROADBAND RF POWER FETs
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MRF166C MRF166C M/A-Com 功能相似 319-07
MOSFET宽带射频功率FET MOSFET BROADBAND RF POWER FETs
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