Technical parameters/rated voltage (DC): | -40.0 V |
|
Technical parameters/rated current: | -1.00 A |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 1 W |
|
Technical parameters/gain bandwidth product: | 50 MHz |
|
Technical parameters/collector breakdown voltage: | -50.0 V (min) |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
|
Technical parameters/minimum current amplification factor (hFE): | 60 @100mA, 1V |
|
Technical parameters/rated power (Max): | 1 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | 55 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Length: | 5.21 mm |
|
Dimensions/Width: | 4.19 mm |
|
Dimensions/Height: | 7.87 mm |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSW51AG
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON SEMICONDUCTOR MPSW51AG 射频双极晶体管
|
||
MPSW51ARLRA
|
ON Semiconductor | 完全替代 | TO-226-3 |
TO-92 PNP 40V 1A
|
||
|
|
Motorola | 完全替代 |
TO-92 PNP 40V 1A
|
|||
|
|
Motorola | 完全替代 |
TO-92 PNP 40V 1A
|
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