Technical parameters/rated voltage (DC): | -40.0 V |
|
Technical parameters/rated current: | -1.00 A |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
|
Technical parameters/Maximum allowable collector current: | 1A |
|
Technical parameters/minimum current amplification factor (hFE): | 60 @100mA, 1V |
|
Technical parameters/rated power (Max): | 1 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 功能相似 | TO-237 |
t-Npn Si-Med Power
|
||
2N6714
|
Central Semiconductor | 功能相似 | TO-237 |
t-Npn Si-Med Power
|
||
|
|
American Microsemiconductor | 功能相似 |
NTE ELECTRONICS 2N6727 Bipolar (BJT) Single Transistor, PNP, 80V, 50MHz, 850mW, 1A, 100 hFE
|
|||
2N6727
|
CJ | 功能相似 | TO-92 |
NTE ELECTRONICS 2N6727 Bipolar (BJT) Single Transistor, PNP, 80V, 50MHz, 850mW, 1A, 100 hFE
|
||
MPSW51A
|
ON Semiconductor | 完全替代 | TO-226-3 |
一瓦高电流晶体管( PNP硅) One Watt High Current Transistors(PNP Silicon)
|
||
MPSW51ARLRA
|
ON Semiconductor | 完全替代 | TO-226-3 |
TO-92 PNP 40V 1A
|
||
|
|
Motorola | 完全替代 |
TO-92 PNP 40V 1A
|
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