Technical parameters/dissipated power: 1000 mW
Technical parameters/minimum current amplification factor (hFE): 60
Technical parameters/Maximum current amplification factor (hFE): 60 @100mA, 1V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/Encapsulation: TO-237
External dimensions/length: 5.21 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-237
Other/Product Lifecycle: Obsolete
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 功能相似 | TO-237 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
|
||
2N6714
|
Central Semiconductor | 功能相似 | TO-237 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review