Technical parameters/frequency: 50 MHz
Technical parameters/rated voltage (DC): -40.0 V
Technical parameters/rated current: -1.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/thermal resistance: 50℃/W (RθJC)
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 60 @100mA, 1V
Technical parameters/rated power (Max): 1 W
Technical parameters/DC current gain (hFE): 50
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.21 mm
External dimensions/height: 7.87 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSW51A
|
ON Semiconductor | 类似代替 | TO-226-3 |
一瓦高电流晶体管（ PNP硅） One Watt High Current Transistors(PNP Silicon)
|
||
MPSW51ARLRPG
|
ON Semiconductor | 完全替代 | TO-226-3 |
一瓦高电流晶体管 One Watt High Current Transistors
|
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