Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/Maximum allowable collector current: | 0.5A |
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Technical parameters/minimum current amplification factor (hFE): | 100 @100mA, 1V |
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Technical parameters/rated power (Max): | 625 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Box (TB) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSA06,126
|
NXP | 完全替代 | TO-226-3 |
SPT NPN 80V 0.5A
|
||
MPSA06-AP
|
Micro Commercial Components | 类似代替 | TO-226-3 |
MICRO COMMERCIAL COMPONENTS MPSA06-AP 双极性晶体管, NPN, 80V, TO-92
|
||
MPSA06RA
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR MPSA06RA 单晶体管 双极, NPN, 80 V, 100 MHz, 625 mW, 500 mA, 100 hFE
|
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