Technical parameters/frequency: | 100 MHz |
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Technical parameters/number of pins: | 3 |
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Technical parameters/dissipated power: | 625 mW |
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Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/minimum current amplification factor (hFE): | 100 @100mA, 1V |
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Technical parameters/rated power (Max): | 625 mW |
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Technical parameters/DC current gain (hFE): | 100 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 625 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Length: | 5.2 mm |
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Dimensions/Width: | 4.19 mm |
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Dimensions/Height: | 5.33 mm |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Industrial, power management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
CJ | 完全替代 | TO-92 |
放大器晶体管 Amplifier Transistors
|
||
MPSA06
|
Diotec Semiconductor | 完全替代 | TO-92 |
放大器晶体管 Amplifier Transistors
|
||
MPSA06
|
Philips | 完全替代 |
放大器晶体管 Amplifier Transistors
|
|||
MPSA06
|
Multicomp | 完全替代 | TO-92 |
放大器晶体管 Amplifier Transistors
|
||
MPSA06
|
Central Semiconductor | 完全替代 | TO-92-3 |
放大器晶体管 Amplifier Transistors
|
||
MPSA06
|
NTE Electronics | 完全替代 |
放大器晶体管 Amplifier Transistors
|
|||
|
|
NXP | 完全替代 | SOT-54-3 |
放大器晶体管 Amplifier Transistors
|
||
MPSA06RA
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR MPSA06RA 单晶体管 双极, NPN, 80 V, 100 MHz, 625 mW, 500 mA, 100 hFE
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