Technical parameters/frequency: 100 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/rated power (Max): 625 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Manufacturing Applications: Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSA06RL1
|
ON Semiconductor | 类似代替 | TO-226-3 |
TO-92 NPN 80V 0.5A
|
||
MPSA06RL1G
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON SEMICONDUCTOR MPSA06RL1G 单晶体管 双极, NPN, 80 V, 100 MHz, 625 mW, 500 mA, 100 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review