Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/Maximum allowable collector current: | 1A |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-92 |
|
Dimensions/Packaging: | TO-92 |
|
Other/Product Lifecycle: | Active |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC637
|
CDIL | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BC637
|
ON Semiconductor | 功能相似 | TO-226-3 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BC637
|
Philips | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BC637
|
Micro Electronics | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BC637G
|
ON Semiconductor | 功能相似 | TO-226-3 |
高电流晶体管 High Current Transistors
|
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