Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 2V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA733-P
|
Micro Commercial Components | 功能相似 | TO-92 |
TO-92 Plastic-Encapsulate Biploar Transistors5
|
||
BC637
|
CDIL | 功能相似 |
0.8W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1A Ic, 40 - 160 hFE
|
|||
BC637
|
ON Semiconductor | 功能相似 | TO-226-3 |
0.8W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1A Ic, 40 - 160 hFE
|
||
BC637
|
Philips | 功能相似 |
0.8W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1A Ic, 40 - 160 hFE
|
|||
|
BC637
|
Micro Electronics | 功能相似 |
0.8W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1A Ic, 40 - 160 hFE
|
|||
BC637G
|
ON Semiconductor | 类似代替 | TO-226-3 |
高电流晶体管 High Current Transistors
|
||
BC637RL1G
|
ON Semiconductor | 类似代替 | TO-226-3 |
高电流晶体管 High Current Transistors
|
||
BC637_D27Z
|
ON Semiconductor | 功能相似 |
Trans GP BJT NPN 60V 1A 3Pin TO-92 T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review