Technical parameters/frequency: 200 MHz
Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.625 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 2V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC637
|
CDIL | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BC637
|
ON Semiconductor | 功能相似 | TO-226-3 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BC637
|
Philips | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
|
BC637
|
Micro Electronics | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BC637G
|
ON Semiconductor | 类似代替 | TO-226-3 |
高电流晶体管 High Current Transistors
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review