Technical parameters/rated voltage (DC): | 300 V |
|
Technical parameters/rated current: | 500 mA |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 15 W |
|
Technical parameters/breakdown voltage (collector emitter): | 300 V |
|
Technical parameters/Maximum allowable collector current: | 0.5A |
|
Technical parameters/minimum current amplification factor (hFE): | 30 |
|
Technical parameters/maximum current amplification factor (hFE): | 240 |
|
Technical parameters/rated power (Max): | 1.56 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.38 mm |
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Dimensions/Packaging: | TO-252-3 |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
|
Other/Minimum Packaging: | 2500 |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 |
ON SEMICONDUCTOR MJD340T4G 单晶体管 双极, 通用, NPN, 300 V, 10 MHz, 1.56 W, 500 mA, 30 hFE
|
|||
MJD340T4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MJD340T4G 单晶体管 双极, 通用, NPN, 300 V, 10 MHz, 1.56 W, 500 mA, 30 hFE
|
||
MJD47T4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MJD47T4G 单晶体管 双极, NPN, 250 V, 10 MHz, 1.56 W, 1 A, 30 hFE
|
||
NJVMJD340T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
MJD340: 0.5 A，300 V，高电压，NPN 双极功率晶体管
|
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