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Model MJD340T4G

Description ON SEMICONDUCTOR MJD340T4G 单晶体管双极, 通用, NPN, 300 V, 10 MHz, 1.56 W, 500 mA, 30 hFE

Brand: ON Semiconductor

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	300 V
Technical parameters/rated current:	500 mA
Technical parameters/number of pins:	4
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	1.56 W
Technical parameters/breakdown voltage (collector emitter):	300 V
Technical parameters/Maximum allowable collector current:	0.5A
Technical parameters/minimum current amplification factor (hFE):	30 @50mA, 10V
Technical parameters/rated power (Max):	1.56 W
Technical parameters/DC current gain (hFE):	30
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	1560 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Length:	6.73 mm
Dimensions/Width:	6.22 mm
Dimensions/Height:	2.38 mm
Dimensions/Packaging:	TO-252-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-65℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Customs information/ECCN code:	EAR99

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