Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 1.56 W |
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Technical parameters/breakdown voltage (collector emitter): | 300 V |
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Technical parameters/Maximum allowable collector current: | 0.5A |
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Technical parameters/minimum current amplification factor (hFE): | 30 @50mA, 10V |
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Technical parameters/rated power (Max): | 1.56 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 1560 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD340T4
|
ST Microelectronics | 完全替代 | TO-252-3 |
Trans GP BJT NPN 300V 0.5A 3Pin(2+Tab) DPAK T/R
|
||
|
|
Motorola | 完全替代 |
ON SEMICONDUCTOR MJD340T4G 单晶体管 双极, 通用, NPN, 300 V, 10 MHz, 1.56 W, 500 mA, 30 hFE
|
|||
MJD340T4G
|
ON Semiconductor | 完全替代 | TO-252-3 |
ON SEMICONDUCTOR MJD340T4G 单晶体管 双极, 通用, NPN, 300 V, 10 MHz, 1.56 W, 500 mA, 30 hFE
|
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