Technical parameters/rated voltage (DC): 300 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 15 W
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 30 @50mA, 10V
Technical parameters/rated power (Max): 1.56 W
Technical parameters/DC current gain (hFE): 30
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1560 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Motorola | 类似代替 |
ON SEMICONDUCTOR MJD340T4G 单晶体管 双极, 通用, NPN, 300 V, 10 MHz, 1.56 W, 500 mA, 30 hFE
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MJD340T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD340T4G 单晶体管 双极, 通用, NPN, 300 V, 10 MHz, 1.56 W, 500 mA, 30 hFE
|
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