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Model MJD243G
Description ON SEMICONDUCTOR MJD243G Single transistor bipolar, audio, NPN, 100 V, 40 MHz, 1.4 W, 4 A, 40 hFE
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Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
2.72  yuan 2.72yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8840) Minimum order quantity(1)
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Technical parameters/frequency:

40 MHz

 

Technical parameters/rated voltage (DC):

100 V

 

Technical parameters/rated current:

4.00 A

 

Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/number of pins:

3

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

1.4 W

 

Technical parameters/breakdown voltage (collector emitter):

100 V

 

Technical parameters/Maximum allowable collector current:

4A

 

Technical parameters/minimum current amplification factor (hFE):

40 @200mA, 1V

 

Technical parameters/maximum current amplification factor (hFE):

180

 

Technical parameters/rated power (Max):

1.4 W

 

Technical parameters/DC current gain (hFE):

40

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

1400 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-65℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

Customs information/ECCN

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Alternative material

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MJD243 MJD243 ON Semiconductor 类似代替 TO-252-3
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ON SEMICONDUCTOR MJD243T4G Bipolar (BJT) Single Transistor, NPN, 100 V, 40 MHz, 12.5 W, 4 A, 15 hFE 新
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