Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 4.00 A |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 12.5 W |
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Technical parameters/breakdown voltage (collector emitter): | 100 V |
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Technical parameters/Maximum allowable collector current: | 4A |
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Technical parameters/minimum current amplification factor (hFE): | 40 |
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Technical parameters/maximum current amplification factor (hFE): | 180 |
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Technical parameters/rated power (Max): | 1.4 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.38 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Other/Minimum Packaging: | 2500 |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD243G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD243G 单晶体管 双极, 音频, NPN, 100 V, 40 MHz, 1.4 W, 4 A, 40 hFE
|
||
MJD243T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD243T4G Bipolar (BJT) Single Transistor, NPN, 100 V, 40 MHz, 12.5 W, 4 A, 15 hFE 新
|
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