Technical parameters/frequency: 40 MHz
Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 4.00 A
Technical parameters/halogen-free state: Halogen Free
Technical parameters/number of pins: 4
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 12.5 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 40 @200mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 180
Technical parameters/rated power (Max): 1.4 W
Technical parameters/DC current gain (hFE): 40
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1400 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive, Audio, Industrial, Power Management, Audio, Industrial, Power Management, Automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD243G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD243G 单晶体管 双极, 音频, NPN, 100 V, 40 MHz, 1.4 W, 4 A, 40 hFE
|
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