Technical parameters/rated power: | 1.44 W |
|
Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 2 W |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 7.7A |
|
Technical parameters/rise time: | 2.7 ns |
|
Technical parameters/Input capacitance (Ciss): | 448pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/descent time: | 2.9 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 2000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6930A
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6930A 双路场效应管, MOSFET, 双N沟道, 5.5 A, 30 V, 0.032 ohm, 10 V, 1.5 V
|
||
IRF7313TRPBF
|
Infineon | 功能相似 | SOIC-8 |
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.029Ω; ID 6.5A; SO-8; PD 2W; VGS +/-20V
|
||
IRF7313TRPBF
|
IFA | 功能相似 |
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.029Ω; ID 6.5A; SO-8; PD 2W; VGS +/-20V
|
|||
NTMD4N03R2G
|
ON Semiconductor | 功能相似 | SOIC-8 |
N 通道 MOSFET，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
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