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Model FDS6930A
Description FAIRCHILD SEMICONDUCTOR FDS6930A 双路场效应管, MOSFET, 双N沟道, 5.5 A, 30 V, 0.032 ohm, 10 V, 1.5 V
Product QR code
Brand: Fairchild
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.26  yuan 7.26yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5990) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

30.0 V

 

Technical parameters/rated current:

5.50 A

 

Technical parameters/number of channels:

2

 

Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.032 Ω

 

Technical parameters/polarity:

Dual N-Channel

 

Technical parameters/dissipated power:

2 W

 

Technical parameters/threshold voltage:

1.5 V

 

Technical parameters/Input capacitance:

460 pF

 

Technical parameters/gate charge:

5.00 nC

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

5.50 A

 

Technical parameters/rise time:

8 ns

 

Technical parameters/Input capacitance (Ciss):

460pF @15V(Vds)

 

Technical parameters/rated power (Max):

900 mW

 

Technical parameters/descent time:

13 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Length:

4.9 mm

 

Dimensions/Width:

3.9 mm

 

Dimensions/Height:

1.75 mm

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Metho

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