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Model FDD5690
Description FAIRCHILD SEMICONDUCTOR FDD5690 Transistor, MOSFET, N-channel, 9 A, 60 V, 23 Mohm, 10 V, 2.5 V
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Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.26  yuan 7.26yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8094) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

60.0 V

 

Technical parameters/rated current:

30.0 A

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.023 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3.2 W

 

Technical parameters/threshold voltage:

2.5 V

 

Technical parameters/Input capacitance:

1.11 nF

 

Technical parameters/gate charge:

23.0 nC

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Leakage source breakdown voltage:

60.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

9.00 A

 

Technical parameters/rise time:

9 ns

 

Technical parameters/Input capacitance (Ciss):

1110pF @25V(Vds)

 

Technical parameters/rated power (Max):

1.3 W

 

Technical parameters/descent time:

10 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

3.2W (Ta), 50W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.39 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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