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Model NTD5413NT4G

Description 30A,20V,N沟道MOSFET

Brand: ON Semiconductor

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	18.5 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	68 W
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Leakage source breakdown voltage:	60 V
Technical parameters/Continuous drain current (Ids):	30.0 A
Technical parameters/rise time:	20 ns
Technical parameters/Input capacitance (Ciss):	1725pF @25V(Vds)
Technical parameters/rated power (Max):	68 W
Technical parameters/descent time:	8 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	68W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Length:	6.73 mm
Dimensions/Width:	6.22 mm
Dimensions/Height:	2.38 mm
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Contains Lead
Customs information/ECCN code:	EAR99

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