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Model NTD32N06G
Description 60V,32A,N沟道MOSFET
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
3.75  yuan 3.75yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3530) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

60.0 V

 

Technical parameters/rated current:

32.0 A

 

Technical parameters/number of channels:

1

 

Technical parameters/drain source resistance:

26 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

93.75 W

 

Technical parameters/threshold voltage:

2.8 V

 

Technical parameters/Input capacitance:

1.72 nF

 

Technical parameters/gate charge:

60.0 nC

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Leakage source breakdown voltage:

60 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

32.0 A

 

Technical parameters/rise time:

84 ns

 

Technical parameters/Input capacitance (Ciss):

1725pF @25V(Vds)

 

Technical parameters/rated power (Max):

1.5 W

 

Technical parameters/descent time:

93 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Technical parameters/dissipated power (Max):

1.5 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.38 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Oth

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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FDD5690 FDD5690 Rochester 类似代替 TO-252
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