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Model MJD6039T4G

Description 达林顿功率晶体管 Darlington Power Transistors

Brand: ON Semiconductor

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	80.0 V
Technical parameters/rated current:	4.00 A
Technical parameters/halogen-free state:	Halogen Free
Technical parameters/number of pins:	3
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	20 W
Technical parameters/breakdown voltage (collector emitter):	80 V
Technical parameters/Maximum allowable collector current:	4A
Technical parameters/minimum current amplification factor (hFE):	500 @2A, 4V
Technical parameters/rated power (Max):	1.75 W
Technical parameters/DC current gain (hFE):	2500
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	1750 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Length:	6.73 mm
Dimensions/Width:	6.22 mm
Dimensions/Height:	2.38 mm
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-65℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99

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