Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 4.00 A
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 500 @2A, 4V
Technical parameters/rated power (Max): 1.75 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD6039T4
|
ON Semiconductor | 功能相似 | TO-252-3 |
SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20W
|
||
MJD6039T4G
|
ON Semiconductor | 完全替代 | TO-252-3 |
达林顿功率晶体管 Darlington Power Transistors
|
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