Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 4A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: PW-MOLD
External dimensions/packaging: PW-MOLD
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD6039T4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
达林顿功率晶体管 Darlington Power Transistors
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review