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Model IRFH6200TRPBF

Description INFINEON IRFH6200TRPBF 晶体管, MOSFET, N沟道, 100 A, 20 V, 0.00075 ohm, 10 V, 800 mV 新

Brand: Infineon

Packaging QFN-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	3.6 W
Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.0012 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	156 W
Technical parameters/threshold voltage:	800 mV
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/Continuous drain current (Ids):	45A
Technical parameters/rise time:	74 ns
Technical parameters/Input capacitance (Ciss):	10890pF @10V(Vds)
Technical parameters/descent time:	160 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	3.6W (Ta), 156W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	QFN-8
Dimensions/Length:	6 mm
Dimensions/Width:	5 mm
Dimensions/Height:	0.83 mm
Dimensions/Packaging:	QFN-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	HotSwap, Isolated Primary Side MOSFETs, Isolated Secondary Side SyncRec MOSFETs
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17

Alternative material

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	IRFH6200TR2PBF	International Rectifier	功能相似	PQFN (5x6)	N 通道功率 MOSFET 40A 至 49A，Infineon Infineon 系列分离式 HEXFET® 功率 MOSFET 包括 N 通道设备，采用表面安装和引线封装。形状系数可解决大多数板布局和热设计挑战问题。在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。	PDF