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Model IRFH6200TR2PBF
Description N Channel power MOSFETs 40A to 49A, Infineon Infineon series split HEXFET ® Power MOSFETs include N-channel devices, which are surface mounted and lead packaged. The shape factor can solve most board layout and thermal design challenges. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging PowerVDFN-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
40.64  yuan 40.64yuan
1+:
$ 49.5808
10+:
$ 46.7360
100+:
$ 44.6227
250+:
$ 44.2976
500+:
$ 43.9725
1000+:
$ 43.6067
2500+:
$ 43.2816
5000+:
$ 43.0784
Quantity
1+
10+
100+
250+
500+
Price
$49.5808
$46.7360
$44.6227
$44.2976
$43.9725
Price $ 49.5808 $ 46.7360 $ 44.6227 $ 44.2976 $ 43.9725
Start batch production 1+ 10+ 100+ 250+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3527) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 3.6W (Ta), 156W (Tc)

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): 45A

Technical parameters/Input capacitance (Ciss): 10890pF @10V(Vds)

Technical parameters/rated power (Max): 3.6 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 3.6W (Ta), 156W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: PowerVDFN-8

External dimensions/length: 6 mm

External dimensions/width: 5 mm

External dimensions/height: 0.9 mm

External dimensions/packaging: PowerVDFN-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFH6200TRPBF IRFH6200TRPBF Infineon 功能相似 QFN-8
INFINEON IRFH6200TRPBF 晶体管, MOSFET, N沟道, 100 A, 20 V, 0.00075 ohm, 10 V, 800 mV 新
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