Technical parameters/rated power: 250 W
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.60 W
Technical parameters/product series: IRFH6200
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 100 A
Technical parameters/Input capacitance (Ciss): 10890pF @10V(Vds)
Technical parameters/rated power (Max): 3.6 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PQFN (5x6)
External dimensions/packaging: PQFN (5x6)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFH6200TRPBF
|
Infineon | 功能相似 | QFN-8 |
INFINEON IRFH6200TRPBF 晶体管, MOSFET, N沟道, 100 A, 20 V, 0.00075 ohm, 10 V, 800 mV 新
|
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