Technical parameters/dissipated power: | 225 mW |
|
Technical parameters/breakdown voltage: | 30 V |
|
Technical parameters/rated power (Max): | 225 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 225 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Length: | 2.9 mm |
|
Dimensions/Width: | 1.3 mm |
|
Dimensions/Height: | 1.04 mm |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Industrial, power management |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SST174-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
JFET Transistor, JFET, JFET, 30V, -20mA, -135mA, 10V, TO-236
|
||
SST174-E3
|
Vishay Semiconductor | 功能相似 | TO-236 |
JFET Transistor, JFET, JFET, 30V, -20mA, -135mA, 10V, TO-236
|
||
SST174-T1-E3
|
VISHAY | 功能相似 | SOT-23 |
JFET N-CH 30V 20mA SOT-23
|
||
SST174-T1-E3
|
Vishay Semiconductor | 功能相似 | TO-236 |
JFET N-CH 30V 20mA SOT-23
|
||
SST174-T1-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
JFET N-CH 30V 20mA SOT-23
|
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