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Description FAIRCHILD SEMICONDUCTOR FDD7N20TM 晶体管, MOSFET, N沟道, 5 A, 200 V, 0.58 ohm, 10 V, 5 V
Product QR code
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.13  yuan 2.13yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(6815) Minimum order quantity(1)
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Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.58 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

43 W

 

Technical parameters/threshold voltage:

5 V

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/Leakage source breakdown voltage:

200 V

 

Technical parameters/Continuous drain current (Ids):

5A

 

Technical parameters/rise time:

30 ns

 

Technical parameters/Input capacitance (Ciss):

250pF @25V(Vds)

 

Technical parameters/rated power (Max):

43 W

 

Technical parameters/descent time:

10 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

43 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.39 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with s

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