Technical parameters/minimum current amplification factor (hFE): | 20 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-236 |
|
Dimensions/Length: | 3 mm |
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Dimensions/Width: | 1.4 mm |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | TO-236 |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT2369
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2369 单晶体管 双极, NPN, 15 V, 350 mW, 200 mA, 40 hFE
|
||
MMBT2369
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2369 单晶体管 双极, NPN, 15 V, 350 mW, 200 mA, 40 hFE
|
||
|
|
Panjit | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT2369A 单晶体管 双极, NPN, 15 V, 225 mW, 200 mA, 40 hFE
|
||
MMBT2369A
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2369A 单晶体管 双极, NPN, 15 V, 225 mW, 200 mA, 40 hFE
|
||
MMBT2369A
|
National Semiconductor | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT2369A 单晶体管 双极, NPN, 15 V, 225 mW, 200 mA, 40 hFE
|
||
|
|
National | 功能相似 |
FAIRCHILD SEMICONDUCTOR MMBT2369A 单晶体管 双极, NPN, 15 V, 225 mW, 200 mA, 40 hFE
|
|||
|
|
Leshan Radio | 功能相似 |
ON SEMICONDUCTOR MMBT2369ALT1G 单晶体管 双极, NPN, 15 V, 225 mW, 200 mA, 40 hFE
|
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