Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 15 V |
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Technical parameters/Maximum allowable collector current: | 0.2A |
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Technical parameters/minimum current amplification factor (hFE): | 40 |
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Technical parameters/maximum current amplification factor (hFE): | 120 |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-23 |
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Dimensions/Packaging: | SOT-23 |
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Other/Minimum Packaging: | 3000 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT2369
|
ON Semiconductor | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2369 单晶体管 双极, NPN, 15 V, 350 mW, 200 mA, 40 hFE
|
||
MMBT2369
|
Fairchild | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2369 单晶体管 双极, NPN, 15 V, 350 mW, 200 mA, 40 hFE
|
||
|
|
Leshan Radio | 功能相似 |
ON SEMICONDUCTOR MMBT2369ALT1G 单晶体管 双极, NPN, 15 V, 225 mW, 200 mA, 40 hFE
|
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