Technical parameters/number of pins: | 3 |
|
Technical parameters/dissipated power: | 350 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 15 V |
|
Technical parameters/minimum current amplification factor (hFE): | 40 @10mA, 1V |
|
Technical parameters/rated power (Max): | 350 mW |
|
Technical parameters/DC current gain (hFE): | 40 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 350 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT2369
|
ON Semiconductor | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2369 单晶体管 双极, NPN, 15 V, 350 mW, 200 mA, 40 hFE
|
||
MMBT2369
|
Fairchild | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2369 单晶体管 双极, NPN, 15 V, 350 mW, 200 mA, 40 hFE
|
||
MMBT2369ALT1
|
Motorola | 功能相似 | SOT-23-3 |
开关晶体管NPN硅 Switching Transistors NPN Silicon
|
||
MMBT2369ALT1
|
ON Semiconductor | 功能相似 | SOT-23-3 |
开关晶体管NPN硅 Switching Transistors NPN Silicon
|
||
PMBT2369,215
|
NXP | 功能相似 | SOT-23-3 |
Nexperia PMBT2369,215 , NPN 晶体管, 200 mA, Vce=15 V, HFE:20, 500 MHz, 3引脚 SOT-23 (TO-236AB)封装
|
||
PMBT2369,215
|
Nexperia | 功能相似 | SOT-23-3 |
Nexperia PMBT2369,215 , NPN 晶体管, 200 mA, Vce=15 V, HFE:20, 500 MHz, 3引脚 SOT-23 (TO-236AB)封装
|
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