Technical parameters/rated voltage (DC): 15.0 V
Technical parameters/rated current: 200 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 225 mW
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 20 @100mA, 1V
Technical parameters/rated power (Max): 225 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT2369
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2369 单晶体管 双极, NPN, 15 V, 350 mW, 200 mA, 40 hFE
|
||
MMBT2369
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2369 单晶体管 双极, NPN, 15 V, 350 mW, 200 mA, 40 hFE
|
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|
|
Leshan Radio | 类似代替 |
ON SEMICONDUCTOR MMBT2369ALT1G 单晶体管 双极, NPN, 15 V, 225 mW, 200 mA, 40 hFE
|
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MMBT2369LT3G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
NPN 晶体管，ON Semiconductor 这些 ON Semiconductor 双极晶体管可放大模拟或数字信号。 它们还可切换直流或用作振荡器。 ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
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