Chip AI consultant
Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 200 W |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Continuous drain current (Ids): | 57A |
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Technical parameters/rise time: | 58 ns |
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Technical parameters/Input capacitance (Ciss): | 3130pF @25V(Vds) |
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Technical parameters/descent time: | 47 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 200000 mW |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | D2PAK-263 |
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Dimensions/Packaging: | D2PAK-263 |
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Physical parameters/materials: | Silicon |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF3710SPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRF3710SPBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 23 mohm, 10 V, 4 V
|
||
IRF3710SPBF
|
IFC | 功能相似 |
INFINEON IRF3710SPBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 23 mohm, 10 V, 4 V
|
|||
IRF3710STRLPBF
|
International Rectifier | 功能相似 | TO-263-3 |
N沟道,100V,57A,23mΩ@10V
|
||
IRF3710STRLPBF
|
IFC | 功能相似 |
N沟道,100V,57A,23mΩ@10V
|
|||
IRF3710STRLPBF
|
Infineon | 功能相似 | TO-263-3 |
N沟道,100V,57A,23mΩ@10V
|
||
IRF3710STRRPBF
|
Infineon | 功能相似 | TO-263-3 |
N 沟道 100 V 200 W 130 nC 功率 Mosfet 表面贴装 - D2PAK-3
|
||
STB35NF10T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
||
STB40NF10LT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB40NF10LT4 晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
|
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