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Model IRF3710STRRPBF

Description N 沟道 100 V 200 W 130 nC 功率 Mosfet 表面贴装 - D2PAK-3

Brand: Infineon

Packaging TO-263-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	200 W
Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	23 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	3.8 W
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Leakage source breakdown voltage:	100 V
Technical parameters/Continuous drain current (Ids):	57A
Technical parameters/rise time:	58 ns
Technical parameters/Input capacitance (Ciss):	3130pF @25V(Vds)
Technical parameters/descent time:	47 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	200W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-263-3
Dimensions/Length:	6.5 mm
Dimensions/Width:	6.22 mm
Dimensions/Height:	2.3 mm
Dimensions/Packaging:	TO-263-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Not Recommended for New Designs
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
IRF3710SPBF	Infineon	类似代替	TO-263-3	INFINEON IRF3710SPBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 23 mohm, 10 V, 4 V	PDF
IRF3710SPBF	IFC	类似代替		INFINEON IRF3710SPBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 23 mohm, 10 V, 4 V
IRF3710STRLPBF	International Rectifier	类似代替	TO-263-3	N沟道,100V,57A,23mΩ@10V
IRF3710STRLPBF	IFC	类似代替		N沟道,100V,57A,23mΩ@10V	PDF
IRF3710STRLPBF	Infineon	类似代替	TO-263-3	N沟道,100V,57A,23mΩ@10V	PDF
IRF3710STRR	Infineon	类似代替	TO-263-3	D2PAK N-CH 100V 57A	PDF