Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 57.0 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 200W (Tc)
Technical parameters/product series: IRF3710S
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 57.0 A
Technical parameters/rise time: 58.0 ns
Technical parameters/Input capacitance (Ciss): 3130pF @25V(Vds)
Technical parameters/dissipated power (Max): 200W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF3710STRRPBF
|
Infineon | 类似代替 | TO-263-3 |
N 沟道 100 V 200 W 130 nC 功率 Mosfet 表面贴装 - D2PAK-3
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review