Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 40.0 A
Technical parameters/drain source resistance: 0.03 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 115 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 40.0 A
Technical parameters/rise time: 60 ns
Technical parameters/Input capacitance (Ciss): 1550pF @25V(Vds)
Technical parameters/rated power (Max): 115 W
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 115W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.75 mm
External dimensions/width: 10.4 mm
External dimensions/height: 4.6 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF3710SPBF
|
Infineon | 功能相似 | TO-263-3 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 23Milliohms; ID 57A; D2Pak; PD 200W; VGS +/-20
|
||
IRF3710SPBF
|
IFC | 功能相似 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 23Milliohms; ID 57A; D2Pak; PD 200W; VGS +/-20
|
|||
IRF3710STRLPBF
|
International Rectifier | 功能相似 | TO-263-3 |
N沟道,100V,57A,23mΩ@10V
|
||
IRF3710STRLPBF
|
IFC | 功能相似 |
N沟道,100V,57A,23mΩ@10V
|
|||
IRF3710STRLPBF
|
Infineon | 功能相似 | TO-263-3 |
N沟道,100V,57A,23mΩ@10V
|
||
IRF540NSTRRPBF
|
Infineon | 功能相似 | TO-263-3 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 44Milliohms; ID 33A; D2Pak; PD 130W; VGS +/-20
|
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