Technical parameters/minimum current amplification factor (hFE): | 30 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 1.3 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SC-73 |
|
Dimensions/Length: | 6.7 mm |
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Dimensions/Width: | 3.7 mm |
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Dimensions/Height: | 1.7 mm |
|
Dimensions/Packaging: | SC-73 |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP41,115
|
Nexperia | 功能相似 | TO-261-4 |
Nexperia BSP41,115 , NPN 晶体管, 1 A, Vce=60 V, HFE:30, 100 MHz, 4引脚 SOT-223 (SC-73)封装
|
||
BSP41,115
|
NXP | 功能相似 | TO-261-4 |
Nexperia BSP41,115 , NPN 晶体管, 1 A, Vce=60 V, HFE:30, 100 MHz, 4引脚 SOT-223 (SC-73)封装
|
||
BSP43,115
|
NXP | 功能相似 | TO-261-4 |
单晶体管 双极, NPN, 80 V, 100 MHz, 1.3 W, 1 A, 30 hFE
|
||
JAN2N3420
|
Microsemi | 功能相似 | TO-5 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1Element, NPN, Silicon, TO-5, Metal, 3Pin
|
||
KSH200TF
|
Rochester | 功能相似 | TO-252 |
FAIRCHILD SEMICONDUCTOR KSH200TF 单晶体管 双极, NPN, 25 V, 65 MHz, 12.5 W, 5 A, 10 hFE
|
||
KSH200TF
|
ON Semiconductor | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR KSH200TF 单晶体管 双极, NPN, 25 V, 65 MHz, 12.5 W, 5 A, 10 hFE
|
||
KSH200TF
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR KSH200TF 单晶体管 双极, NPN, 25 V, 65 MHz, 12.5 W, 5 A, 10 hFE
|
||
MJD2955G
|
ON Semiconductor | 功能相似 | TO-252-3 |
MJD 系列 60 V 10 A PNP 互补 功率晶体管 - TO-252-3
|
||
MJD2955T4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MJD2955T4G Bipolar (BJT) Single Transistor, PNP, -60 V, 2 MHz, 1.75 W, -10 A, 5 hFE 新
|
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