Technical parameters/frequency: 100 MHz
Technical parameters/number of pins: 4
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.3 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 5V
Technical parameters/rated power (Max): 1.3 W
Technical parameters/DC current gain (hFE): 30
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial, Communications & Networking
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP56T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR BCP56T1G 单晶体管 双极, 通用, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 250 hFE
|
||
BCP56T3G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR BCP56T3G Bipolar (BJT) Single Transistor, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 25 hFE 新
|
||
BZX79-B3V6,113
|
Nexperia | 功能相似 | DO-35-2 |
NXP BZX79-B3V6,113 单管二极管 齐纳, 3.6 V, 400 mW, DO-204AH, 2 %, 2 引脚, 200 °C
|
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