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Model BSP41,115

Description NXP BSP41,115 Single transistor bipolar, NPN, 60 V, 100 MHz, 1.3 W, 1 A, 100 hFE

Brand: NXP

Packaging TO-261-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/frequency:	100 MHz
Technical parameters/number of pins:	4
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	1.3 W
Technical parameters/breakdown voltage (collector emitter):	60 V
Technical parameters/Maximum allowable collector current:	1A
Technical parameters/minimum current amplification factor (hFE):	100 @100mA, 5V
Technical parameters/rated power (Max):	1.3 W
Technical parameters/DC current gain (hFE):	100
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	1300 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	TO-261-4
Dimensions/Width:	3.7 mm
Dimensions/Packaging:	TO-261-4
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Communications & Networking, Industrial, Power Management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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