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Model SIR882ADP-T1-GE3
Description VISHAY SIR882ADP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0072 ohm, 10 V, 1.2 V
Product QR code
Brand: Vishay Semiconductor
Packaging PowerPAKSO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
6.61  yuan 6.61yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9255) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.0072 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

83 W

 

Technical parameters/threshold voltage:

1.2 V

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Input capacitance (Ciss):

1975pF @50V(Vds)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

5400 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

PowerPAKSO-8

 

Dimensions/Length:

6.15 mm

 

Dimensions/Width:

5.15 mm

 

Dimensions/Height:

1.04 mm

 

Dimensions/Packaging:

PowerPAKSO-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, Communications & Networking, Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIR882DP-T1-GE3 SIR882DP-T1-GE3 Vishay Siliconix 功能相似 SO-8
VISHAY SIR882DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 7.1 mohm, 10 V, 1.2 V
PDF
SIR882DP-T1-GE3 SIR882DP-T1-GE3 Vishay Semiconductor 功能相似 PowerPAK SO
VISHAY SIR882DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 7.1 mohm, 10 V, 1.2 V
PDF

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