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Model SIR882DP-T1-GE3
Description VISHAY SIR882DP-T1-GE3 Transistor, MOSFET, N-channel, 60 A, 100 V, 7.1 Mohm, 10 V, 1.2 V
Product QR code
Brand: Vishay Semiconductor
Packaging PowerPAK SO
Delivery time
Packaging method
Standard packaging quantity 1
8.49  yuan 8.49yuan
10+:
$ 10.1856
100+:
$ 9.6763
500+:
$ 9.3368
1000+:
$ 9.3198
2000+:
$ 9.2519
5000+:
$ 9.1670
7500+:
$ 9.0991
10000+:
$ 9.0652
Quantity
10+
100+
500+
1000+
2000+
Price
$10.1856
$9.6763
$9.3368
$9.3198
$9.2519
Price $ 10.1856 $ 9.6763 $ 9.3368 $ 9.3198 $ 9.2519
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3290) Minimum order quantity(10)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.0071 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 5.4 W

Technical parameters/threshold voltage: 1.2 V

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: PowerPAK SO

External dimensions/packaging: PowerPAK SO

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIR882ADP-T1-GE3 SIR882ADP-T1-GE3 Vishay Semiconductor 功能相似 PowerPAKSO-8
VISHAY SIR882ADP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0072 ohm, 10 V, 1.2 V
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