Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 5.4W (Ta), 83W (Tc)
Technical parameters/Input capacitance (Ciss): 1930pF @50V(Vds)
Technical parameters/dissipated power (Max): 5.4W (Ta), 83W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR882ADP-T1-GE3
|
Vishay Semiconductor | 功能相似 | PowerPAKSO-8 |
VISHAY SIR882ADP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0072 ohm, 10 V, 1.2 V
|
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